About:
Education:
97.09 ~ 02.08 KAIST Electrical Engineering Ph.D.
95.03 ~ 97.08 KAIST Electrical Engineering Master
90.03 ~ 94.08 Kyungpook National University Department of Electronics Engineering Becheler
Experience:
2025.03 ~ Current Gachon University semiconductor design Visiting Professor
2002.09 ~ 2025.02 Samsung Electronics Co., Ltd semiconductor design Principal Engineer
Honors & Specialities:
2002.05 Reduction of dark current in ann-type In₀.₃Ga₀.₇As/GaAs quantum well infrared photodetector using a cameldiode structure, SOLID-STATE ELECTRONICS, vol. 46, no. 5, pp. 651–654, May2002.
2003.02 Effect of the dot size distributionon quantum dot infrared photoresponse and temperature-dependent darkcurrent,Applied Physics Letters, vol. 82, no. 7, pp. 1099–1101, Feb. 2003.
2001.07 Infrared absorption of anIn₀.₂Ga₀.₈As/GaAs quantum-well infrared photodetector employing a p–n–p cameldiode structure,Applied Physics Letters, vol. 79, no. 4, pp. 455–457, Jul. 2001.
2008.05 US7787308 Flash memory device and program method thereof
2008.05 US7830720 Methods of programming non-volatile semiconductor memory devices using different program verification operations and related devices
2008.10 US7623377 Flash memory device having single page buffer structure and related programming operations
2008.04 US8031525 Flash memory device and program method thereof
2009.08 US7800971 Flash memory devices and methods of programming the same by overlapping programming operations for multiple mats
2006.02 US7394719 Flash memory device with burst read mode of operation
2005.06 US7315198 Voltage regulator
