About:
"Quality Driven by Data, Reliability Proven by Science" Q&R Data Analysis Lab changes the quality paradigm of the semiconductor and display industry. Quality: Zero-defect orientation through statistical process control and data mining Reliability: Predicting life through accelerated life testing and physical analysis Data Science: Developing AI-Powered Anomaly Detection and Yield Optimization Algorithms We design the tomorrow of technology through data. - Physics of Failure, Accelerated Life Test (ALT), and Failure Analysis. - Yield Optimization, Zero Defect, and Automotive Semiconductor Reliability (AEC-Q100). "Beyond Defects, Toward Perfection" "Predicting Reliability through Data Intelligence" "The Standard for Future Quality"
Education:
16.03 ~ 21.02 SUNGKYUNKWAN University Department of Electronic, Electrical and Computer Engineering Ph. D.
14.03 ~ 16.02 SUNGKYUNKWAN University Department of Semiconductor Display Engineering Master
90.03 ~ 97.03 SUNGKYUNKWAN University Department of Electronic Engineering B.S.
Experience:
24.9 ~ Gachon University ,Department of Semiconductor Display visiting professor
97.01 ~ Samsung Electronics Co., Ltd semiconductor Quality & Reliability Part leader
Honors & Specialities:
2022.03 Improving hole injection ability using a newly proposed WO3/NiOx bilayer in solution processed quantum dot light-emitting diodes (Current Applied Physics, March 2022)
2021.03 Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction (2021 IEEE International Reliability Physics Symposium (IRPS))
2020.12 Reliability on Evolutionary FinFET CMOS Technology and Beyond (2020 IEEE International Electron Devices Meeting (IEDM))
2020.09 Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane) (Applied Sciences, September 2020)
2020.03 Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology (2020 IEEE International Reliability Physics Symposium (IRPS))
2020.03 Reliability of Advanced FinFET Technology Nodes Beyond Planar: Invited (2020 4th IEEE Electron Devices Technology & Manufacturing Conference)
2019.10 Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer (Journal of Nanoscience and Nanotechnology, October 2019)
2019.09 Enhanced Reliability of 7-nm Process Technology Featuring EUV (IEEE Transactions on Electron Devices, November 2019)
2019.06 Enhanced Reliability of 7nm Process Technology featuring EUV (2019 Symposium on VLSI Technology)
2019.03 Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit (2019 IEEE International Reliability Physics Symposium (IRPS))
2018.03 Three-dimensional (3D) Characterization of Electromigration Failure Mechanism of Solder Joints in WLP using X-ray Microscopy (2018 IEEE International Symposium on the Physical and Failure Analysis)
2018.03 Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology (2018 IEEE International Reliability Physics Symposium (IRPS))
2018.03 Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI (2018 IEEE International Reliability Physics Symposium (IRPS))
2018.03 A systematic study of gate dielectric TDDB in FinFET technology (2018 IEEE International Reliability Physics Symposium (IRPS))
2017.03 New insights into 10nm FinFETBTI and its variation considering the local layout effects (2017 IEEE International Reliability Physics Symposium (IRPS))
2013.10 Effects of N-rich TiN capping layer on reliability in gate-last high-k/Metal Gate MOSFETs (224th ECS Meeting, October 2013)
2013.10 Effects of N-Rich TiN Capping Layer On Reliability in 20nm Gate-Last High-k/Metal Gate Mosfets (ECS Meeting Abstracts, October 2013)
2013.03 Technology scaling on High-K & Metal-Gate FinFET BTI reliability (2013 IEEE International Reliability Physics Symposium (IRPS))
2012.03 Gate stack process optimization for TDDB improvement in 28nm high-k/metal gate nMOSFETs (2012 IEEE International Reliability Physics Symposium (IRPS))
2011.03 Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs (2011 IEEE International Reliability Physics Symposium (IRPS))
Patent
2020.03 Organic Light emitting device (US 10,651,410 B2)
2020.03 Semiconductor device including a gate structure with a wider end portion than a linear portion (US 2020/0144384 A1)
2020.02 Organic Light emitting device (US 10,553,804 B2)
2020.01 Semiconductor device and method for fabricating the same (US 2020/0035675 A1)
2019.10 Semiconductor device including test structure (US 2019/0326187 A1)
2019.03 유기발광소자 (국내 특허 제10-1959812호)
2018.09 FinFET and Method of forming Fin of the FinFET (US 9,892,977 B2)
2018.08 Semiconductor devices including electrodes for temperature measurement (US 10,048,137 B2)
2017.06 발광다이오드용 발광층 및 이의 제조방법 (국내특허 제10-1751734호)
2015.09 Semiconductor devices including electrodes for temperature measurement (US2105/0098489 A1)
