About:
Professor YongtakKim received his Ph.D. degree from Sungkyunkwan University and has more than 27 years of experience in thin film process technology, particularly in PECVD-based plasma processes. His expertise spans semiconductor and display materials, device structures, and advanced thin film deposition technologies. Prior to joining academia, he worked for approximately 20 years at Samsung Display, where he was involved in the development and mass production of advanced OLED display technologies. During his tenure at Samsung Display, his research focused on Thin Film Encapsulation (TFE) technologies for OLED displays, including material development, multilayer structure design, process optimization, and reliability evaluation. TFE is a critical technology that determines the lifetime and environmental stability of OLED devices. He contributed to the development and mass-production specification selection of TFE technologies applied to OLED displays used in Samsung smartphones and QD-TV products. His work played an important role in establishing high-reliability encapsulation structures for commercial OLED panels. His technical expertise also includes the development of Si-based inorganic thin film materials such as silicon nitride and silicon oxide, as well as plasma polymerization processes for functional thin film coatings. More recently, his research interests have expanded to encapsulation and passivation technologies for next-generation micro-display devices, including TFE for OLEDoS(OLED on Silicon) and passivation technologies for improving the light efficiency of LEDoS(LED on Silicon) devices. Based on his extensive industrial experience, he is currently conducting research and educating students in the fields of advanced display materials, plasma thin film processes, and next-generation display encapsulation technologies.
Education:
01.03 ~ 05.02 SUNGKYUNKWAN University Department of Advanced Materials Engineering Ph. D.
99.03 ~ 01.02 SUNGKYUNKWAN University Department of Advanced Materials Engineering Master
92.03 ~ 99.02 SUNGKYUNKWAN University Department of Metallurgical Engineering B.S.
Experience:
26. 03 ~ Gachon University ,Department of Semiconductor Display Professor
23.03 ~ 26.02 HOSEO univ. Dep of Semiconductor Engineering Prof.
05.02 ~ 23.02 Samsung Display OLED R&D Process Chief
Honors & Specialities:
Thesis
2007.06 Refractive index and etched structure of silicon nitride waveguides fabricated by PECVD
2005.04 Etching characterization of shaped hole high density plasma for using MEMS devices
2005.07 Optimization of SiN thin film for high index contrast planar silica waveguides
2005.09 PECVD SiO2 and SiON films dependant on the RF bias power for low-loss silica waveguide
2004.04 Plasma reaction of N2O on hydrogenated amorphous carbon films by PECVD
2004.09 SiON/SiO2 multilayer deposited by PECVD for low-loss waveguides
2003.04 N2 doped SiO2-SiON planar waveguides deposited by PECVD method
2003.06 Influence of hydrogen on SiON thick film for silica waveguide deposited by PECVD and annealing effect
2003.07 Refractive index control of core layer using PECVD and FHD for silica optical waveguide
2003.08 Dependence of the bonding structure of DLC thin films on the deposition conditions of PECVD method
2003.10 Effect of optical properties of Er2O3 doped stoichiometric
LiNbO3 single crystals and co-doped with MgO
2003.11 Effect of annealing for YIG single crystal thick films
2003.11 Growth and characteristics of (TbBi)3(FeAlGa)5O12 and
(EuBi)3(FeAlGa)5O12 garnet single crystal thick films
2002.04 Influence of hydrogen on SiO2 thick film deposited by PECVD and FHD for silica optical waveguide
2002.04 Annealing effect on the optical properties of a-SiC:H films deposited by PECVD
2002.05 Characterization of a-SiC:H films deposited by RF plasma CVD
2002.06 Characterization of amophous SiC:H thin ffilms grown by RF plasma enhance CVD and annealing temperature
2002.08 Dependence of electrical and optical properties of amorphous SiC:H thin films grown by RF PECVD on annealing temperature
2002.09 Refractive index control of silicon oxynitride thick films on core layer of silica optical waveguide
2002.09 Growth of YIG thick films by the change of supercooling and substrate rotation speed
2002.09 Growth of Bi:YIG thick films by change of PbO/Bi2O3 molar ratio
2002.11 Chracterization of deep dry etching of silicon single crystal by HDP
2001.05 The effect of RF power and SiH4/(N2O+N2) ratio in properties of SiON thick film for silica optical waveguide
2001.08 Crystallization of a-Si:H thin films deposited by RF plasma CVD method
2001.11 Effect of N2O/SiH4 flow ratio and RF power on properties of SiO2 thick films deposited by PECVD
2000.05 Surface analysis of a-SixC1-x:H deposited by RF PECVD
Academic activities
2025.08 Thermal and Structural Property Evaluation of Si3N4 Ceramics via Cu Ion Implantation and Annealing - [The 25th International Meeting on Information Display (IMID)]
2025.08 Effect of Cu Ion Implantation Energy on Thermal Conductivity of Synthetic Graphite Sheet - [The 25th International Meeting on Information Display (IMID)]
2025.08 Characterization of AlN ceramics subjected to ion implantation and annealing - [The 25th International Meeting on Information Display (IMID)]
2025.09 Helium Ion Implantation Effects on Through-Plane Thermal Conductivity of Synthetic Graphite Sheets - [Materials Research Meeting 2025]
2025.10 Effect of annealing after Cu ion implantation on thermal properties of AlN ceramics - [The 2025 Annual Meeting of the Taiwanese Colloid and Interface Society (2025 TWCIS) &International Symposium]
2025.10 Effect of Copper Ion Implantation and Subsequent Annealing on Synthetic Graphite Sheet - [The 2025 Annual Meeting of the Taiwanese Colloid and Interface Society (2025 TWCIS) &International Symposium]
2025.10 Effect of Nitrogen Ion Implantation on Thermal Conductivity of Graphite Sheets - [Materials Research Meeting 2025]
2004.04 The effect 0f N2 and N2O doping gas on DLC thin films deposited by PECVD - [European Materials Research Society 2004 Spring Meeting]
2004.04 SiN/SiO2 multilayer deposited by PECVD for plasma lightwave circuits - [European Materials Research Society 2004 Spring Meeting]
2004.07 Low optical loss silicon oxynitride plnar waveguides by PECVD - [Asia Pacific Conference on Plasma Science and Technology Symposium on Plasma Science for Materials]
2004.07 Optical and structure properties of SiN thin film deposited by PECVD and annealing effect - [Asia Pacific Conference on Plasma Science and Technology Symposium on Plasma Science for Materials]
2004.09 Low index contrast planar SiON waveguide deposited by PECVD - [The Korean Ceramic Society]
2004.09 Effect of gas flow ratio and voltage of the assist ion beam on residual stress and optical properties of Ta2O5 thin films - [The Korean Ceramic Society]
2003.04 Plasma reactions of N2O on hydrogenated amorphous carbon films by PECVD method - [European Materials Research Society 2003 Spring Meeting]
2003.04 Growth and characteristics of (TbBi)3(FeAlGa)5O12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films - [European Materials Research Society 2003 Spring Meeting]
2003.04 Magneto-optic properties of EuTbBi(FeAlGa)5O12 garnet single crystal thick films - [European Materials Research Society 2003 Spring Meeting]
2003.06 Optical and electrical properties of nitrogen incorporation in diamond-like carbon films bu a microwave plasma enhanced chemical vapor deposition system - [European Vacuum Congress 2003]
2003.07 The effect of process parameter for SiO2 and SiON thick films deposited by PECVD - [Asian-European International Conference on Plasma Surface Enguneering (AEPSE 2003)]
2003.07 Crystallization of a-Si:H and a-SiC:H thin films deposited by PECVD and annealing effect - [Asian-European International Conference on Plasma Surface Enguneering (AEPSE 2003)]
2003.07 The effect of various gas on DLC films deposited by PECVD - [The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials (ISAEM 2003)]
2003.07 Low-loss silica waveguide on Si substrate deposited PECVD - [The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials (ISAEM 2003)]
2003.07 Magnetic domain structure of (EuBi)3(FeAlGa)5O12, (TbEuBi)3(FeAlGa)5O12 garnet single crystal thick films - [The 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials (ISAEM 2003)]
2003.09 Influence of dopant for silica thick film deposited by FHD - [The Korean Ceramic Society]
2003.09 Influence of bias power and gas flow rate on LiNbO3 dry etching for optical waveguide - [The Korean Ceramic Society]
2003.09 Behavior of Pbions as annealing for YIG single crystal thick films - [The Korean Ceramic Society]
2003.11 Influence of doping gas for diamond-like carbon thin films deposited by PECVD - [The Korean Association of Crystal Growth (KACG) and Asian Society for Crystal Growth and Crystal Technology Seminar (ASCGCT)]
2003.11 Growth and characterization YIG garnet single crystal thick films as a bismuth and terbium substituted level - [The Korean Association of Crystal Growth (KACG) and Asian Society for Crystal Growth and Crystal Technology Seminar (ASCGCT)]
2002.04 Fabrication of plasma optical waveguide by plasma enhanced chemical vapor deposition - [Joint International Plasma Symposium of 6th APCPST , 15th SPSM, OS 2002 & 11th KAPRA]
2002.04 Characterization of core layers for silica optical waveguide by PECVD and FHD process - [Joint International Plasma Symposium of 6th APCPST , 15th SPSM, OS 2002 & 11th KAPRA]
2002.04 Structure and optical properties of high quality a-SiC:H films deposited by PECVD method - [Joint International Plasma Symposium of 6th APCPST , 15th SPSM, OS 2002 & 11th KAPRA]
2002.06 Annealing effect of N2 doped SiO2 thick films deposited by plasma enhanced chemical vapor deposition method - [8th International Conference on Plasma Surface Engineering Conference and Exhibition (PSE 2002)]
2002.06 Deposition of SiO2 and SiON multilayer films by PECVD mnethod for silica optical waveguide application - [8th International Conference on Plasma Surface Engineering Conference and Exhibition (PSE 2002)]
2002.07 Influence on the film properties of torch inclination angle in FHD process - [Asia-Pacific Optical and wireless Communication 2002]
2002.09 Growth and magneto-optic properties of YIG films by supercooling and growth time - [The Korean Ceramic Society]
2002.09 A study of high aspect ratio silicon etching by Inductively coupled plasma - [The Korean Ceramic Society]
2002.09 Optical properties of SiON thick film deposited by PECVD and annealing effect - [The Korean Ceramic Society]
2002.09 Optical properties and structure analysis of SiO2 thick films deposited by PECVD - [The Korean Ceramic Society]
2002.09 Growth and properties of Bi:YIG thick films by change of PbO/Bi2O3 - [The Korean Ceramic Society]
2002.09 Fabrication and characterization of Au micro-elecrode for high speed optical modulator - [The Korean Ceramic Society]
2001.04 Synthsis of a-Si:H thin films deposited by PECVD method - [2001 Korea-Japan Crystal Growth Seminar]
2001.06 The effect of RF power for high quality a-Si:H thin films deposited by RF PECVD - [The 1st International Symposium on Advanced Plasma Surface Technology (ISAPST-1)]
2001.06 Crystallization of a-SiC:H thin films deposited by RF PECVD - [The 1st International Symposium on Advanced Plasma Surface Technology (ISAPST-1)]
2001.06 Dependence of electrical and optical properties of amorphous SiC:H thin films grown by RF plasma enhanced CVD on annealing temperature - [The 1st International Symposium on Advanced Plasma Surface Technology (ISAPST-1)]
2001.09 Fabrication of silicon dioxide thick film by flame hydrolysis deposition and plasma enhanced chemical vapor deposition - [Frontier of Surface Engineering 2001 (FSE 2001) Conference and Exhibition]
2001.09 The bonding structure DLC thin films in deposition condition by PECVD method - [Frontier of Surface Engineering 2001 (FSE 2001) Conference and Exhibition]
2001.11 Characterization of s-Si thin film deposited by PECVD method - [The Korean Ceramic Society]
2001.11 Effect of RF power and N2O/SiH4 ratio on properties of SiO2 thick film deposited by PECVD - [The Korean Ceramic Society]
2000.04 Optical Properties as deposition condition of a-SiC:H deposited by RF PECVD - [The Korean Vacuum Society]
2000.06 Annealing effect of a-SiC:H thin film deposited by PECVD - [The Korean Ceramic Society]
2000.08 Investigation of annealing effect for a-SiC:H tjhin films deposited by Plasma enhanced plasma vapor deposition - [The Korean Institute of Electrical and Electronic Material Engineering]
2000.10 Ctystallization of a-SiC:H thin film deposited by PECVD and annealing effect - [The Korean Ceramic Society]
1999.05 Surface analysis of a-SiC:H deposited by RF plasma-enhanced CVD - ['99 International Conference of the KAGG and 6th Korea-Japan EMG Symposium]
1999.07 Growth of Microcrystalline SiV thin film deposited by RF Plasma CVD - [The 1st Asian Conference on Crystal Growth and Crystal Technology]
1999.07 Optical properties of amorphous/microcrystalline SiC:H thin films growth by RF Plasma enhanced CVD - [The 1st Asian Conference on Crystal Growth and Crystal Technology]
1999.10 The surface morphology of a-SiC:H films by PECVD - [The Korea Ceramic Society]
Patent
2025.04 OLED Display Device
2025.08 OLED Display Device
2025.09 Functional Cell Culture Vessel with Outgassing Barrier Properties Generated from Cell Culture Containers
2024.05 Metal Member with Enhanced Thermal Conductivity Efficiency and Die-Cast Component Including the Same
2024.07 High Heat-Dissipation Metal Member and High Heat-Dissipation Die-Cast Component Including the Same
2024.09 Culture Vessel with Enhanced Cell Culture Performance
2022.06 Method for Manufacturing a Display Device
2021.09 Mask for OLED Deposition and Method for Manufacturing the Same
2017.07 OLED Organic Light-Emitting Device
2012.06 OLED Organic Light-Emitting Device
2011.08 Organic Light-Emitting Device and Method for Manufacturing the Same
