About:
SangBae Lee received the Ph.D. degrees in Kwangwoon's Department of Electronics Materials Engineering in Korea. He has been with the LG Semiconductor and Hyundai Electronics and Samsung Electronics from 1996 to 2022. - Major Professional(at Samsung Electronics) . Establishment and Expansion of the 8-inch Foundry Business (3 years) . Semiconductor Line Operations (4 years) . LSI Product Development and Mass Production (11 years) - Areas of Expertise . Foundry Business, Semiconductor Line Operations, and LSI Process Architecture Since 2023, he is currently a Professor with the Department of Semiconductor Display, Gachon University, Seongnam, Korea. His current research interests include high-performance semiconductor device and next-generation semiconductor device and applications.
Education:
89.03 ~ 96.08 KwangWoon University Department of Electronic materials Ph. D.
87.03~ 89.02 KwangWoon University Department of Electronic materials Master
83.03 ~1987.02 KwangWoon University Department of Electronic materialsg B.S.
Experience:
24.03 ~ Gachon University, Department of Semiconductor Display Semiconductor
Fabrication, Process, Equipment Professor
03.01 ~ 24.02 Samsung Semiconductor fabrication & process development Vice-president
96.12 ~ 2002.12 LG Memory Product Development Assistant Researcher
Honors & Specialities:
2009 Method of fabricating a semiconductor device having a threshold voltage control region
2008 Display device and method for sensing input point using magnetic fluid
2007 Method of fabricating semiconductor device includinggate dielectrics having different thicknesses
2007 MOLD APPARATUS
2006 Method for programming EEPROM device having single gate structure
2005 EEPROM device having single gate structure, operationmethod of the EEPROM and fabrication method of the EEPROM
2005 EEPROM for increasing programing speed, preparationmethod of the EEPROM, and operation method of the EEPROM
2004 A semiconductor device with a high voltage and methodof manufacturing the same
2003 One time programmable memory device and programmingmethod thereof
2001 A ARRAY OF FLASH MEMORY CELL AND METHOD FORPROGRAMMING OF DATA THEREBY AND METHOD FOR ERASED OFDATA THEREBY
2000 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATINGTHE SAME
2000 APPARATUS FOR FINGER-PRINT RECOGNITION
2000 A ARRAY OF FLASH MEMORY CELL AND METHOD FORPROGRAMMING OF DATA THEREBY AND METHOD FOR ERASEDTHEREBY
1999 Method for manufacturing flash memory cell and the same
1999 SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF
1999 Method for Manufacturing of semiconductor device
1999 MANUFACTURING METHOD FOR FLASH MEMORY
1998 METHOD FOR FORMING TUNNELING OXIDE FILM AND METHOD FOR PRODUCING NONVOLATILE MEMORY DEVICE THEREOF
1998 NON VOLATILE MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF
1997 TEST PATTERN OF A FLASH MEMORY CELL, PARTICULARLY CONCERNED WITH MEASURING A TUNNELING OXIDE LAYER AND AN INTERLAYER INSULATING LAYER
